Dr. Mukku Pavan Kumar is a distinguished researcher from VIT-AP University, Amaravati, India, specializing in radiation-hardened memory circuits, in-memory computing architectures, and energy-efficient hardware accelerators for advanced space and GPU applications. His pioneering research focuses on the modeling, analysis, and design of radiation-tolerant SRAM and MRAM systems, leading to significant advancements in soft error resilience and self-recoverable circuit architectures. Dr. Mukku Pavan Kumar’s scholarly contributions include 12 Scopus-indexed publications with 118 citations from 78 documents and an h-index of 7 (Scopus Author ID: 57211979910, ORCID: 0000-0002-0756-8390). His research has been featured in high-impact journals such as IEEE Access, Microelectronics Reliability, Integration, Microsystem Technologies, and International Journal of Circuit Theory and Applications (Wiley). He has presented his works at leading IEEE conferences, including ISCAS, TENCON, ICEFEET, and DICCT, and holds a patent for a self-recoverable radiation-resistant memory cell designed for aerospace electronics. Recognized with multiple Best Paper Awards and the Best Researcher Award from VIT-AP University, his research significantly advances space-grade VLSI system reliability and next-generation chip design. In addition, Dr. Kumar serves as a peer reviewer for reputed journals such as IEEE Access, Wiley’s Journal of Electrical and Computer Engineering, and Microelectronics Reliability, and actively contributes to collaborative R&D initiatives focused on radiation-resilient chip design, AI-driven hardware accelerators, and space electronics innovation.

Profiles: Scopus | Google Scholar | ORCID | ResearchGate

Featured Publications

• Mukku, P. K., & Lorenzo, R. (2023). A review on radiation‐hardened memory cells for space and terrestrial applications. International Journal of Circuit Theory and Applications, 51(1), 475–499. https://doi.org/10.1002/cta.3678

• Mukku, P. K., & Lorenzo, R. (2023). Design and analysis of radiation hardened 10T SRAM cell for space and terrestrial applications. Microsystem Technologies, 29(10), 1489–1500. https://doi.org/10.1007/s00542-023-07589-2

• Mukku, P. K., & Lorenzo, R. (2023). Double node upset immune RHBD-14T SRAM cell for space and satellite applications. IEEE Access, 11, 96256–96271. https://doi.org/10.1109/ACCESS.2023.3321957

• Mukku, P. K., & Lorenzo, R. (2024). An efficient radiation hardening SRAM cell to mitigate single and double node upset soft errors. Microelectronics Reliability, 152, 115303. https://doi.org/10.1016/j.microrel.2024.115303

• Satapathy, S. C., Bhateja, V., & Das, S. (2018). Smart intelligent computing and applications. In Proceedings of the Second International Conference on Smart Computing and Informatics (SCI) (Vol. 1). Springer. https://doi.org/10.1007/978-981-13-1921-1_1